• DocumentCode
    1832700
  • Title

    A sub-1v low-dropout regulator with an on-chip voltage reference

  • Author

    Huang, Wei-Jen ; Liu, Shen-Iuan

  • Author_Institution
    Grad. Inst. of Electron. Eng. & Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
  • fYear
    2008
  • fDate
    3-5 Nov. 2008
  • Firstpage
    165
  • Lastpage
    168
  • Abstract
    A sub-1V 50 mA low-dropout regulator (LDR) with an on-chip voltage reference is presented. This LDR utilizes the push-pull output stage to reduce the size of the power PMOS transistor. The proposed LDR with the on-chip voltage reference has been fabricated in 0.18 mum CMOS process, and its active area is 0.148 mm2. Experimental results demonstrate that the voltage reference and the LDR work for the supply voltage of 0.6 V~1.2V. For the proposed LDR under a supply of 0.6 V, the measured settling time, voltage dip, and quiescent current are less than 2mus, 50 mV, and 16.6 muA, respectively.
  • Keywords
    CMOS integrated circuits; MOSFET; low-power electronics; voltage regulators; CMOS process; current 50 mA; low-dropout regulator; on-chip voltage reference; power PMOS transistor; push-pull output stage; quiescent current measurement; settling time measurement; size 0.18 mum; supply voltage; voltage 0.6 V to 1.2 V; voltage dip measurement; CMOS process; Current measurement; MOSFETs; Power engineering and energy; Regulators; Solid state circuits; Threshold voltage; Time measurement; Voltage fluctuations; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2008. A-SSCC '08. IEEE Asian
  • Conference_Location
    Fukuoka
  • Print_ISBN
    978-1-4244-2604-1
  • Electronic_ISBN
    978-1-4244-2605-8
  • Type

    conf

  • DOI
    10.1109/ASSCC.2008.4708754
  • Filename
    4708754