DocumentCode :
1832700
Title :
A sub-1v low-dropout regulator with an on-chip voltage reference
Author :
Huang, Wei-Jen ; Liu, Shen-Iuan
Author_Institution :
Grad. Inst. of Electron. Eng. & Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
fYear :
2008
fDate :
3-5 Nov. 2008
Firstpage :
165
Lastpage :
168
Abstract :
A sub-1V 50 mA low-dropout regulator (LDR) with an on-chip voltage reference is presented. This LDR utilizes the push-pull output stage to reduce the size of the power PMOS transistor. The proposed LDR with the on-chip voltage reference has been fabricated in 0.18 mum CMOS process, and its active area is 0.148 mm2. Experimental results demonstrate that the voltage reference and the LDR work for the supply voltage of 0.6 V~1.2V. For the proposed LDR under a supply of 0.6 V, the measured settling time, voltage dip, and quiescent current are less than 2mus, 50 mV, and 16.6 muA, respectively.
Keywords :
CMOS integrated circuits; MOSFET; low-power electronics; voltage regulators; CMOS process; current 50 mA; low-dropout regulator; on-chip voltage reference; power PMOS transistor; push-pull output stage; quiescent current measurement; settling time measurement; size 0.18 mum; supply voltage; voltage 0.6 V to 1.2 V; voltage dip measurement; CMOS process; Current measurement; MOSFETs; Power engineering and energy; Regulators; Solid state circuits; Threshold voltage; Time measurement; Voltage fluctuations; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2008. A-SSCC '08. IEEE Asian
Conference_Location :
Fukuoka
Print_ISBN :
978-1-4244-2604-1
Electronic_ISBN :
978-1-4244-2605-8
Type :
conf
DOI :
10.1109/ASSCC.2008.4708754
Filename :
4708754
Link To Document :
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