• DocumentCode
    1832716
  • Title

    Advanced IC technology - opportunities and challenges

  • Author

    Anis, Mohab

  • Author_Institution
    Electr. & Comput. Eng. Dept., Univ. of Waterloo, Waterloo, ON
  • fYear
    2008
  • fDate
    18-21 May 2008
  • Firstpage
    776
  • Lastpage
    779
  • Abstract
    Technology scaling introduces major challenges in yield and performance with the employment of standard single-gate MOSFETs, traditional metal interconnects, and the classical 2-dimensional integration technology. Therefore, there is a need for innovative technologies aimed at enhancing the integration density, performance, and reliability of nanoscale chips. Promising technologies to resolve the degrading performance of devices and interconnects include: (1) 3-dimensional chip stacking with vertical interconnections through chips, (2) on-chip carbon nanotubes as a replacement for metal interconnects , and (3) scalable devices such as double gate FinFETs with lower leakage current characteristics as compared to the standard single-gate transistors. This paper introduces those three promising technologies and highlights the associated opportunities and challenges.
  • Keywords
    integrated circuits; 2D integration technology; 3D chip stacking; IC technology; innovative technology; integrated circuit; integration density; metal interconnects; nanoscale chips; on-chip carbon nanotube; scalable device; single-gate MOSFET; single-gate transistor; technology scaling; CMOS technology; Carbon nanotubes; FinFETs; Integrated circuit interconnections; Integrated circuit technology; MOSFETs; Paper technology; Silicon; Stacking; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
  • Conference_Location
    Seattle, WA
  • Print_ISBN
    978-1-4244-1683-7
  • Electronic_ISBN
    978-1-4244-1684-4
  • Type

    conf

  • DOI
    10.1109/ISCAS.2008.4541533
  • Filename
    4541533