DocumentCode :
1832761
Title :
Electrical modeling and characterization of 3-D vias
Author :
Savidis, Ioannis ; Friedman, Eby G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Rochester, Rochester, NY
fYear :
2008
fDate :
18-21 May 2008
Firstpage :
784
Lastpage :
787
Abstract :
Electrical characterization of the resistance, capacitance, and inductance of inter-plane 3-D vias is presented in this paper. Both capacitive and inductive coupling between multiple 3-D vias is described as a function of the separation distance and plane location. The effects of placing a third shield via between two signal vias is investigated as a means to limit the capacitive coupling. The location of the return path is examined to determine the best placement of a 3-D via to reduce the overall loop inductance. Based on the extracted resistance, capacitance, and inductance, the L/R time constant is shown to be much larger than the RC time constant, demonstrating that the 3-D via structure investigated in this paper is inductively limited rather than capacitively limited.
Keywords :
integrated circuit design; integrated circuit layout; integrated circuit modelling; 3D vias; L/R time constant; RC time constant; capacitive coupling; electrical characterization; electrical modeling; inductive coupling; Capacitance; Dielectrics; Electric resistance; Electrical resistance measurement; Inductance; Routing; Signal analysis; Silicon; Topology; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-1683-7
Electronic_ISBN :
978-1-4244-1684-4
Type :
conf
DOI :
10.1109/ISCAS.2008.4541535
Filename :
4541535
Link To Document :
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