New extraction algorithm for GaAs-HBTs with low intrinsic base resistance

Author

Lenk, F. ; Rudolph, M.

Author_Institution

Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany

Volume

2

fYear

2002

fDate

2-7 June 2002

Firstpage

725

Abstract

A new algorithm for extraction of the small-signal equivalent circuit elements of HBTs is presented. An analytical non-iterative approach is used in order to ensure physical significance of the extracted parameters. In order to enhance the robustness and reliability of the extraction routine, a simplified formula to determine the intrinsic base resistance R/sub b2/ Is presented. The new algorithm is verified by extraction of GaInP/GaAs HBT equivalent-circuit elements.

Keywords

III-V semiconductors; equivalent circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device models; GaInP-GaAs; GaInP/GaAs HBT; analytical noniterative method; intrinsic base resistance; parameter extraction algorithm; smali-signal equivalent circuit model; Algorithm design and analysis; Artificial intelligence; Circuit topology; Condition monitoring; Electrical resistance measurement; Equivalent circuits; Heterojunction bipolar transistors; MMICs; Parameter extraction; Robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011730

Filename

1011730