Integration of low k spin-on polymer (SOP) using electron beam cure for non-etch-back application

Author

Hui, Jane C M ; Xu, Yi ; Foong, Chow Yeog ; Marvin, Liao ; Charles, Lin ; Shung, Lin Yih ; Inamdar, Amit ; Yang, Jingjun ; Kennedy, Joseph ; Ross, M. ; Wang, Shi-Qing

Author_Institution

Chartered Semicond. Manuf. Ltd., Singapore

fYear

1998

fDate

1-3 Jun 1998

Firstpage

217

Lastpage

219

Abstract

This work involves low k spin-on dielectric integration for sub-0.25 μm geometry. SOP 418 (k=2.7) in a nonetchback (NEB) scheme was used during the integration process. The NEB process was developed using film modification by electron beam curing. The process was characterized in terms of SOP planarization, film properties, intermetal and intrametal dielectric constant measurements, and via resistance

Keywords

dielectric thin films; electric resistance; electron beam applications; integrated circuit interconnections; integrated circuit metallisation; permittivity; polymer films; spin coating; surface topography; surface treatment; 0.25 micron; NEB process; SOP 418 dielectric; SOP planarization; electron beam cure; electron beam curing; film modification; film properties; integration process; intermetal dielectric constant; intrametal dielectric constant; low k spin-on dielectric integration; low k spin-on polymer dielectric integration; nonetchback process; via resistance; Curing; Dielectric constant; Dielectric materials; Dielectric measurements; Electron beams; Floods; Microelectronics; Planarization; Polymers; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704903

Filename

704903