Title :
Integration of low k spin-on polymer (SOP) using electron beam cure for non-etch-back application
Author :
Hui, Jane C M ; Xu, Yi ; Foong, Chow Yeog ; Marvin, Liao ; Charles, Lin ; Shung, Lin Yih ; Inamdar, Amit ; Yang, Jingjun ; Kennedy, Joseph ; Ross, M. ; Wang, Shi-Qing
Author_Institution :
Chartered Semicond. Manuf. Ltd., Singapore
Abstract :
This work involves low k spin-on dielectric integration for sub-0.25 μm geometry. SOP 418 (k=2.7) in a nonetchback (NEB) scheme was used during the integration process. The NEB process was developed using film modification by electron beam curing. The process was characterized in terms of SOP planarization, film properties, intermetal and intrametal dielectric constant measurements, and via resistance
Keywords :
dielectric thin films; electric resistance; electron beam applications; integrated circuit interconnections; integrated circuit metallisation; permittivity; polymer films; spin coating; surface topography; surface treatment; 0.25 micron; NEB process; SOP 418 dielectric; SOP planarization; electron beam cure; electron beam curing; film modification; film properties; integration process; intermetal dielectric constant; intrametal dielectric constant; low k spin-on dielectric integration; low k spin-on polymer dielectric integration; nonetchback process; via resistance; Curing; Dielectric constant; Dielectric materials; Dielectric measurements; Electron beams; Floods; Microelectronics; Planarization; Polymers; Wet etching;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704903
