Title :
2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without gate-oxide reliability issue
Author :
Ker, Ming Dou ; Wang, Tzu Ming ; Liao, Hung Tai
Author_Institution :
Nanoelectron. & Gigascale Syst. Lab., Nat. Chiao-Tung Univ., Hsinchu
Abstract :
A new 2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without suffering gate-oxide reliability issue is proposed, which is one of the key mixed- voltage I/O cells in a cell library. The proposed circuit is realized with only thin gate-oxide devices with floating n-well technique. The proposed 2xVDD-tolerant crystal oscillator circuit has been designed and verified in a 90-nm 1-V CMOS process to serve 1/2-V mixed-voltage interface applications.
Keywords :
CMOS integrated circuits; integrated circuit reliability; logic gates; oscillators; 1xVDD CMOS devices; 2xVDD-tolerant crystal oscillator circuit; gate-oxide devices; gate-oxide reliability; key mixed-voltage I/O cells; CMOS process; CMOS technology; Circuits; Clocks; Costs; Feedback; Inverters; Oscillators; Power supplies; Voltage;
Conference_Titel :
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-1683-7
Electronic_ISBN :
978-1-4244-1684-4
DOI :
10.1109/ISCAS.2008.4541544
