Electrical characterization of 2-D doping profiles

Author

Ouwerling, G J L ; Staalenburg, J.C. ; Kleefstra, M.

Author_Institution

Electr. Mater. Lab., Delft Univ. of Technol., Netherlands

fYear

1990

fDate

5-7 March 1990

Firstpage

3

Lastpage

8

Abstract

The extension of traditional electrical doping profiling methods, such as the capacitance-voltage (C-V) method, to two-dimensional doping profiling is discussed. Suitable test structures are proposed. The measurement data are interpreted with inverse modeling, which minimizes the difference between measured electrical data and measurement data simulated using a parameterized model of the doping profile. Experimental results are provided for the 2-D doping profile in the junction charge-coupled device (CCD). The application of the inverse modeling technique to device parameter extraction in a more general sense is briefly discussed.<>

Keywords

charge-coupled device circuits; digital simulation; doping profiles; 2-D doping profiles; C-V curves; capacitance-voltage measurement; device parameter extraction; electrical characterisation; electrical doping profiling methods; inverse modeling technique; junction CCD; junction charge-coupled device; parameterized model; test structures; two-dimensional doping profiling; Capacitance measurement; Constraint optimization; Discrete event simulation; Doping profiles; Electric variables measurement; Inverse problems; Laboratories; Parameter extraction; Semiconductor process modeling; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1990. ICMTS 1990. Proceedings of the 1990 International Conference on

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/ICMTS.1990.67871

Filename

67871