DocumentCode :
1833348
Title :
Analytical modeling of common-gate low noise amplifiers
Author :
Nejati, Hamid ; Ragheb, Tamer ; Massoud, Yehia
Author_Institution :
Dept. of Electr. & Comput. Eng., Rice Univ., Houston, TX
fYear :
2008
fDate :
18-21 May 2008
Firstpage :
888
Lastpage :
891
Abstract :
The exponential growth of wireless portable device market has been increasing the demand for customizable power- efficient transceivers. In this paper, we present an efficient modeling methodology for common-gate low-noise amplifiers (LNAs). Leveraging our models, we designed LNAs to work for different communication standards, GSM at 900 MHz, Bluetooth at 2.4 GHz, and wireless-LAN at 5.6 GHz. Our methodology achieves about 96.45% average accuracy in predicting different figures of merit (FOM) at the center frequency, while it provides Ave orders of magnitude speedup in the design process compared to simulation-based modeling techniques.
Keywords :
low noise amplifiers; mobile handsets; Bluetooth; GSM; common-gate low noise amplifiers; communication standards; exponential growth; figures of merit; power- efficient transceivers; simulation-based modeling techniques; wireless portable device market; wireless-LAN; Accuracy; Analytical models; Bluetooth; Communication standards; Frequency; GSM; Low-noise amplifiers; Predictive models; Process design; Transceivers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-1683-7
Electronic_ISBN :
978-1-4244-1684-4
Type :
conf
DOI :
10.1109/ISCAS.2008.4541561
Filename :
4541561
Link To Document :
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