Relevant parameters of SPICE3 MOSFET model for EMC analysis

Design of static converters circuits and virtual prototyping of power electronics systems requires the use of heavy semiconductors components models, with a large number of parameters whose exact knowledge often requires several delicate experimental measurements and heavy optimisations procedures. This paper presents a sensitivity survey that permits to determine which parameters of the SPICE3 MOSFET model are applicable for the EMC analysis with the goal to reduce the number of measurements to carry out at the phase of parameters extraction.