DocumentCode :
1833456
Title :
Design of ultra-wideband balun-low noise amplifiers
Author :
Reddy, B. S Prakash ; Bhuvan, B.
Author_Institution :
Dept. of ECE, Nat. Inst. of Technol., Calicut, India
fYear :
2012
fDate :
1-2 March 2012
Firstpage :
1
Lastpage :
4
Abstract :
A 0.13μm CMOS Balun-LNA in the frequency band of 2.1GHz-9.5GHz for ultra-wideband applications has been designed and simulated. A Common Gate (CG) amplifier with source degenerated inductance gives input matching over ultra-wideband frequency range. The combination of a Common-gate (CG) stage and an admittance-scaled common-source (CS) stage with replica biasing is used to maximize balanced operation while canceling the noise of the CG stage. The simulation results show that the balun-LNA achieves NF <; 2.8dB, S11 less than -10dB, maximum gain of 17.8dB with a power consumption of 18.5mW (including buffers) from 1.2V supply.
Keywords :
CMOS integrated circuits; baluns; design; low noise amplifiers; CMOS balun-LNA; admittance-scaled common-source stage; common gate amplifier; design; source degenerated inductance; ultra-wideband balun-low noise amplifiers; Impedance; Impedance matching; Inductors; Noise; Noise figure; Resistors; Transistors; balun; low noise amplifiers; noise cancellation; wide band matching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical, Electronics and Computer Science (SCEECS), 2012 IEEE Students' Conference on
Conference_Location :
Bhopal
Print_ISBN :
978-1-4673-1516-6
Type :
conf
DOI :
10.1109/SCEECS.2012.6184792
Filename :
6184792
Link To Document :
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