Design of ultra-wideband balun-low noise amplifiers

Author

Reddy, B. S Prakash ; Bhuvan, B.

Author_Institution

Dept. of ECE, Nat. Inst. of Technol., Calicut, India

fYear

2012

fDate

1-2 March 2012

Firstpage

1

Lastpage

4

Abstract

A 0.13μm CMOS Balun-LNA in the frequency band of 2.1GHz-9.5GHz for ultra-wideband applications has been designed and simulated. A Common Gate (CG) amplifier with source degenerated inductance gives input matching over ultra-wideband frequency range. The combination of a Common-gate (CG) stage and an admittance-scaled common-source (CS) stage with replica biasing is used to maximize balanced operation while canceling the noise of the CG stage. The simulation results show that the balun-LNA achieves NF <; 2.8dB, S₁₁ less than -10dB, maximum gain of 17.8dB with a power consumption of 18.5mW (including buffers) from 1.2V supply.

Keywords

CMOS integrated circuits; baluns; design; low noise amplifiers; CMOS balun-LNA; admittance-scaled common-source stage; common gate amplifier; design; source degenerated inductance; ultra-wideband balun-low noise amplifiers; Impedance; Impedance matching; Inductors; Noise; Noise figure; Resistors; Transistors; balun; low noise amplifiers; noise cancellation; wide band matching;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical, Electronics and Computer Science (SCEECS), 2012 IEEE Students' Conference on

Conference_Location

Bhopal

Print_ISBN

978-1-4673-1516-6

Type

conf

DOI

10.1109/SCEECS.2012.6184792

Filename

6184792