Two-step planarized Al-Cu PVD process using long throw sputtering technology

Author

Ku, Tzu-Kun ; Chen, Hsueh-Chung ; Mizusawa, Y. ; Motegi, Nobuhiro ; Kondo, Tomoyasu ; Toyoda, Satoru ; Wei, Clare ; Chen, Jack ; Chen, Lai-Juh

Author_Institution

Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

1998

fDate

1-3 Jun 1998

Firstpage

226

Lastpage

228

Abstract

In this paper, comprehensive studies on planarized Al alloy interconnect and contact plug technology using long-throw-sputtering (LTS) and two-step cold/hot Al flow technologies are presented. Experimental results demonstrate that LTS-based cold/hot Al PVD technology is capable of completely filling contact holes as small as 0.3 μm and simultaneously planarizing the Al wiring at process temperatures as low as 420°C. The wider process window and excellent Al(111) preferred texture suggest that this technology is an attractive alternative to conventional W/Al interconnect metallization

Keywords

aluminium alloys; copper alloys; integrated circuit interconnections; integrated circuit metallisation; sputter deposition; surface texture; surface topography; surface treatment; 0.3 micron; 420 C; Al alloy contact plug technology; Al wiring planarization; Al(111) preferred texture; AlCu; LTS-based cold/hot Al PVD technology; W-Al; W/Al interconnect metallization; contact hole filling; contact holes; long throw sputtering technology; long-throw-sputtering; planarized Al alloy interconnect; process temperature; process window; two-step cold/hot Al flow technologies; two-step planarized Al-Cu PVD process; Artificial intelligence; Atherosclerosis; Dielectric substrates; Filling; Lifting equipment; Metallization; Plasma temperature; Plugs; Sputtering; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704906

Filename

704906