Title :
45 GHz highly integrated phase-locked loop frequency synthesizer in SiGe bipolar technology
Author :
Ritzberger, G. ; Bock, J. ; Scholtz, A.L.
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
This paper presents a highly integrated 45 GHz phase-locked loop frequency synthesizer. The monolithic circuit consists of a voltage-controlled oscillator with frequency doubler and divide-by-16 static frequency divider and is manufactured in a pre-production low-cost 0.4 /spl mu/m/85 GHz SiGe bipolar technology. The power consumption is 650 mW from the 5 V supply. External synthesizer building blocks are a commercially available PLL-IC, a passive loop filter, and a reference oscillator.
Keywords :
Ge-Si alloys; bipolar digital integrated circuits; digital phase locked loops; frequency dividers; frequency multipliers; frequency synthesizers; semiconductor materials; voltage-controlled oscillators; 45 GHz; 5 V; 650 mW; SiGe; bipolar technology; divide-by-16 static frequency divider; frequency doubler; passive loop filter; phase-locked loop frequency synthesizer; power consumption; pre-production low-cost technology; reference oscillator; voltage-controlled oscillator; Energy consumption; Frequency conversion; Frequency synthesizers; Germanium silicon alloys; Integrated circuit technology; Manufacturing; Passive filters; Phase locked loops; Silicon germanium; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011759
