Accurate prediction of PHEMT intermodulation distortion using the nonlinear discrete convolution model

Author

Costantini, A. ; Paganelli, R.P. ; Traverso, P.A. ; Argento, D. ; Favre, G. ; Pagani, M. ; Santarelli, Alberto ; Vannini, G. ; Filicori, F.

Author_Institution

Dept. of Eng., Ferrara Univ., Italy

Volume

2

fYear

2002

fDate

2-7 June 2002

Firstpage

857

Abstract

A general-purpose, technology-independent behavioral model is adopted for the intermodulation performance prediction of PHEMT devices. The model can be easily identified since its nonlinear functions are directly related to conventional DC and small-signal differential parameter measurements. Experimental results which confirm the model accuracy at high operating frequencies are provided in the paper.

Keywords

high electron mobility transistors; intermodulation distortion; microwave field effect transistors; semiconductor device measurement; semiconductor device models; PHEMT; intermodulation distortion; model accuracy; nonlinear discrete convolution model; nonlinear functions; operating frequencies; small-signal differential parameter measurements; technology-independent behavioral model; Convolution; Distortion measurement; Electron devices; Frequency; Intermodulation distortion; Numerical simulation; PHEMTs; Power system modeling; Predictive models; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011765

Filename

1011765