Transient-to-digital converter for ESD protection design in microelectronic systems

Author

Ker, Ming-Dou ; Yen, Cheng-Cheng ; Liao, Chi-Sheng ; Chen, Tung-Yang ; Tsai, Chih-Chung

Author_Institution

Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu

fYear

2008

fDate

3-5 Nov. 2008

Firstpage

409

Lastpage

412

Abstract

An on-chip transient-to-digital converter for system-level electrostatic discharge (ESD) protection is proposed. The proposed transient-to-digital converter is designed to detect fast electrical transients during the system-level ESD events. The output digital thermometer codes can correspond to different ESD voltages under system-level ESD tests. The experimental results in a 0.18-mum CMOS integrated circuit (IC) with 3.3-V devices have confirmed the detection function and digital output codes.

Keywords

CMOS integrated circuits; electrostatic discharge; integrated circuit reliability; integrated circuit testing; transients; CMOS integrated circuit; ESD voltage; electrostatic discharge protection design; fast electrical transient detection; microelectronic system-level ESD protection; on-chip transient-to-digital converter; output digital thermometer codes; size 0.18 mum; system-level ESD events; system-level ESD test; voltage 3.3 V; CMOS digital integrated circuits; CMOS integrated circuits; Circuit testing; Electrostatic discharge; Event detection; Microelectronics; Protection; System testing; System-on-a-chip; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2008. A-SSCC '08. IEEE Asian

Conference_Location

Fukuoka

Print_ISBN

978-1-4244-2604-1

Electronic_ISBN

978-1-4244-2605-8

Type

conf

DOI

10.1109/ASSCC.2008.4708814

Filename

4708814