Development of Cu etch process for advanced Cu interconnects

Author

Ye, Yan ; Ma, Diana ; Zhao, Allen ; Hsieh, Peter ; Tu, Wayne ; Deng, Xiancan ; Chu, Gary ; Mu, Chun ; Chow, Jenn ; Moon, Peter ; Sherman, Steve

Author_Institution

Appl. Mater. Inc., Santa Clara, CA, USA

fYear

1998

fDate

1-3 Jun 1998

Firstpage

235

Lastpage

237

Abstract

Recent development efforts in copper etch processing show promising results in many areas that have posed significant challenges for this new technology. We report on etch performance for features down to 0.25 μm with aspect ratios greater than 2:1. Copper etch rates greater than 5000 □/min have been achieved, and corrosion-free post Cu etch performance has been demonstrated for periods in excess of 72 hours. Electrical tests were conducted and are presented in detail

Keywords

ULSI; copper; corrosion; etching; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; integrated circuit yield; 0.25 micron; 72 hr; Cu; Cu etch process; Cu etch rates; Cu interconnects; ULSI; copper etch processing; corrosion-free post Cu etch performance; electrical tests; etch performance; feature aspect ratios; feature size; Aluminum; Chemicals; Copper; Corrosion; Etching; Plasma applications; Plasma chemistry; Plasma properties; Plasma temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704909

Filename

704909