Title :
Investigation of localized states in cadmium zinc telluride crystals by scanning photodielectric spectroscopy
Author :
Komar, V.K. ; Nalivaiko, D.P. ; Migal, V.P. ; Chugai, O.N. ; Puzikov, V.M. ; Grebenyuk, N.N. ; Abashin, S.L.
Author_Institution :
Dept. of Opt. & Constr. Crystals, Inst. for Single Crystals, Kharkov, Ukraine
Abstract :
We discuss a method of scanning photodielectric spectroscopy of crystals which is based on the measurements of small increments of the real Δε\´ and imaginary Δε" parts of dielectric permittivity, which are induced by a smooth variation of the photoexcitation wavelength. The spectral dependences of both parts of the dielectric constant upon the light wavelength were presented in the complex plane. Application of this method on Cd0.9Zn0.1Te crystals showed a possibility of determining the energy position of the localized states generated in the forbidden zone by the intrinsic structure defects.
Keywords :
II-VI semiconductors; cadmium compounds; localised states; permittivity; photodielectric effect; photoexcitation; zinc compounds; Cd0.9Zn0.1Te; cadmium zinc telluride crystals; complex plane; dielectric permittivity; forbidden zone; intrinsic structure defects; light wavelength; localized states; photoexcitation wavelength; scanning photodielectric spectroscopy; Cadmium compounds; Cooling; Crystals; Energy measurement; Energy states; Photonic band gap; Semiconductor device testing; Spectroscopy; Surface treatment; Zinc compounds;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2003 IEEE
Print_ISBN :
0-7803-8257-9
DOI :
10.1109/NSSMIC.2003.1352646