Title :
Purification and preparation of TlBr crystal for room temperature radiation detector applications
Author :
Oliveira, Icimone B. ; Costa, Fabio E. ; Chubaci, José F D ; Hamada, Margarida M.
Author_Institution :
IPEN/CNEN-SP, Cidade Univ., Sao Paulo, Brazil
Abstract :
Thallium bromide (TlBr) is a compound semiconductor with a high atomic number and wide band gap, being a very promising material to be used as room temperature radiation detectors. In this work, the commercial TlBr powder was used for growing crystals for detector applications. To reduce impurities, this material was purified by the zone refining technique. Trace impurities at ppb/ppm level were analysed using ICP-MS. The efficiency of the purification was evaluated through studies of the decrease impurities concentrations in the TlBr powder and in the materials purified. The crystal quality was verified by DRX. To evaluate the crystal as a semiconductor detector, systematic measurements of the transmittance, resistivity and the radiation response of (241Am, 57Co and 133Ba) gamma rays were carried out.
Keywords :
X-ray detection; crystal purification; electrical resistivity; gamma-ray detection; impurities; mass spectra; radioactive sources; semiconductor counters; zone refining; 133Ba gamma rays; 241Am gamma rays; 57Co gamma rays; DRX; ICP-MS; TlBr crystal preparation; TlBr crystal purification; commercial TlBr powder; compound semiconductor; high atomic number; impurities; ppb level; ppm level; radiation response; resistivity; room temperature radiation detector applications; room temperature radiation detectors; thallium bromide; trace impurities; transmittance; wide band gap; zone refining technique; Atomic measurements; Crystalline materials; Crystals; Powders; Purification; Radiation detectors; Semiconductor impurities; Semiconductor materials; Temperature; Wideband;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2003 IEEE
Print_ISBN :
0-7803-8257-9
DOI :
10.1109/NSSMIC.2003.1352651