Title :
Notice of Retraction
Comparison of relaxation properties of n-type and p-type CdTe single crystals
Author :
Andreev, A. ; Grmela, L. ; Sik, O.
Author_Institution :
Dept. of Phys., Brno Univ. of Technol., Brno, Czech Republic
Abstract :
Notice of Retraction
After careful and considered review of the content of this paper by a duly constituted expert committee, this paper has been found to be in violation of IEEE´s Publication Principles.
We hereby retract the content of this paper. Reasonable effort should be made to remove all past references to this paper.
The presenting author of this paper has the option to appeal this decision by contacting TPII@ieee.org.
The bulk resistance of several CdTe single crystals was measured during long time interval with an applied external voltage. The measurements showed that the sample bulk resistance decreases very slowly after an external electric field was applied. Slow relaxation processes were also observed at temperature changes. The analysis showed that the main difference in relaxation processes between n-type samples and p-type samples is that the bulk resistance of n-type samples changes mainly due to the electron concentration with the temperature changing and the main process in p-type samples with the temperature changing is the hole mobility changing.
Keywords :
II-VI semiconductors; cadmium compounds; electrical resistivity; electron density; hole mobility; γ-rays detection; CdTe; CdTe-based detectors; X-rays detection; bulk resistance; electron concentration; external electric field; mobility changing; n-type CdTe single crystals; p-type CdTe single crystals; relaxation property; slow relaxation process; temperature changing; Atmospheric measurements; Particle measurements; Semiconductor device measurement; Temperature; Temperature measurement; CdTe single crystals; mobility; relaxation process;
Conference_Titel :
Mechanical and Electronics Engineering (ICMEE), 2010 2nd International Conference on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-7479-0
DOI :
10.1109/ICMEE.2010.5558572
