Title :
Full wave analysis of isolated pockets to improve isolation performances in silicon based technology
Author :
Bajon, D. ; Wane, S. ; Baudrand, H. ; Gamand, P.
Author_Institution :
SUPAERO, Toulouse, France
Abstract :
This paper presents a versatile full wave analysis tool in which isolation pockets in IC´s are readily introduced to perform intensive EM simulation including efficient introduction of via interconnects through metal levels. The obtained results are favorably compared to recent experimental published results.
Keywords :
CMOS integrated circuits; circuit simulation; integrated circuit interconnections; integrated circuit modelling; isolation technology; mixed analogue-digital integrated circuits; CMOS integrated circuits; EM simulation; full wave analysis; insertion parameter; isolation performance; isolation pockets; metal levels; mixed signal IC; pad to pad isolation; spatial domain model; transmission parameter; via interconnects; Coupling circuits; Integral equations; Integrated circuit interconnections; Isolation technology; Performance analysis; Printed circuits; Semiconductor device modeling; Silicon; Substrates; Surface waves;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011795
