Title :
Novel technique for determining bias, temperature and frequency dependence of FET characteristics
Author :
Parker, A.E. ; Rathmell, J.G.
Author_Institution :
Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia
Abstract :
A novel measurement of the dynamics of HEMT and MESFET behavior permits classification of dispersion effects and identifies operating regions that they affect. This reveals a simple structure to the otherwise complicated dynamic behavior that has concerned circuit designers. With this insight, it is possible to predict biases, temperatures and frequencies that dispersion will or will not affect. It is interesting to note that, for some devices, dispersion effects can be seen to exist at microwave frequencies and may therefore contribute to intermodulation distortion.
Keywords :
Schottky gate field effect transistors; dispersion (wave); gain measurement; high electron mobility transistors; intermodulation distortion; microwave field effect transistors; semiconductor device measurement; 1 Hz to 10 GHz; FET dynamics; HEMT characteristics; MESFET characteristics; bias dependence; dc measurements; dispersion effects; frequency dependence; intermodulation distortion; intrinsic gain; large-signal pulse measurements; microwave frequencies; operating regions; small-signal RF measurements; temperature dependence; Dispersion; FETs; Frequency dependence; Frequency measurement; HEMTs; MESFETs; Pulse measurements; Radio frequency; Temperature dependence; Time measurement;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011796
