DocumentCode
1834658
Title
Defect structure of high resistive CdTe: in prepared by vertical gradient freeze method
Author
Franc, J. ; Babentsov, V. ; Fiederle, M. ; Belas, E. ; Benz, K.W. ; Hoschl, Pavel
Author_Institution
Inst. of Phys., Charles Univ., Prague, Czech Republic
Volume
5
fYear
2003
fDate
19-25 Oct. 2003
Firstpage
3483
Abstract
High resistive and photosensitive CdTe doped with In aimed for fabrication of X- and gamma-ray detectors was produced by vertical gradient freeze method. A complex investigation of defects and compensation by a number of optical and photoelectrical mapping methods was performed. A model of energy levels dominating the recombination processes in the material was elaborated, where the role of In, and related complexes as well as native defects (Cd vacancy and its competes) is discussed.
Keywords
II-VI semiconductors; X-ray detection; crystal defects; gamma-ray detection; semiconductor counters; CdTe:In; X-ray detector; energy level model; gamma-ray detector; high resistive CdTe defect structure; native defects; optical mapping method; photoelectrical mapping method; photosensitive CdTe; recombination processes; vertical gradient freeze method; Chemicals; Conductivity; Crystals; Electrons; Gamma ray detectors; Impurities; Indium; Photoconductivity; Photoluminescence; Physics;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2003 IEEE
ISSN
1082-3654
Print_ISBN
0-7803-8257-9
Type
conf
DOI
10.1109/NSSMIC.2003.1352662
Filename
1352662
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