DocumentCode :
1834770
Title :
A Microstrip Fixture Design for Power GaAs Fets
Author :
Lane, Richard Q.
Author_Institution :
California Eastern Laboratories
Volume :
15
fYear :
1989
fDate :
15-16 June 1989
Firstpage :
9
Lastpage :
16
Abstract :
Small signal,(low power) devices can very adequately be In the new microstrip design the chip is die attached directly to a gold plated copper or brass carrier which is in intimate thermal contact with a finned aluminum heat sink. This results in an "unblown" thermal resistance of 3.S??C/Watt and a "blown" Rth of 1,6OC/Watt.
Keywords :
Calibration; Coplanar waveguides; FETs; Fixtures; Gallium arsenide; Heat sinks; Microstrip; Power measurement; Semiconductor device measurement; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ARFTG Conference Digest-Spring, 33rd
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
0-7803-5686-1
Type :
conf
DOI :
10.1109/ARFTG.1989.323933
Filename :
4119499
Link To Document :
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