DocumentCode :
1834801
Title :
Design of an X-band pulsed SSPA based on a cascade technique
Author :
Chen, H. ; Jiang, L.-J. ; Ji, X.-F. ; Zhang, Y.-X.
Author_Institution :
Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2011
fDate :
22-25 May 2011
Firstpage :
152
Lastpage :
155
Abstract :
An X-band pulsed solid-state power amplifier (PSSPA) with high output power and high power added efficiency (PAE) is reported in this article. The high power amplifier (HPA) was implemented by a cascade approach, including an MMIC driving amplifier, an internally matched medium-power and a high-power GaAs FET. To achieve optimum electrical performance of the proposed PSSPA, some considerations of the Grounding, DC Blocking Circuit, bias network, microwave absorber, and the isolation blocks, have been taken in our design. Under the pulse condition of 8 KHz pulse repeat frequency (PRF) and 10% of duty cycle, the pulse output power ranges between 45.8 and 46.6 dBm, and the PAE varies between 35.8% and 40.5% from 9.5 to 10.5 GH.
Keywords :
III-V semiconductors; MMIC amplifiers; gallium arsenide; microwave field effect transistors; power amplifiers; DC blocking circuit; GaAs; HPA; MMIC driving amplifier; PAE; PRF; X-band PSSPA; X-band pulsed solid-state power amplifier; bias network; cascade technique; efficiency 35.8 percent to 40.5 percent; frequency 8 kHz; frequency 9.5 GHz to 10.5 GHz; high power added efficiency; high power amplifier; high-power FET; microwave absorber; pulse repeat frequency; MMICs; Microwave amplifiers; Microwave circuits; Power amplifiers; Power generation; Radio frequency; Solid-state power amplifier; cascade technique; hybrid MIC; pulse operation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Technology & Computational Electromagnetics (ICMTCE), 2011 IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-8556-7
Type :
conf
DOI :
10.1109/ICMTCE.2011.5915187
Filename :
5915187
Link To Document :
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