DocumentCode :
1834815
Title :
Ion microprobe analysis of acceptor-doped II-VI compounds
Author :
Sato, F. ; Kagawa, T. ; Yodo, Y. ; Iida, T.
Author_Institution :
Dept. of Electron., Osaka Univ., Japan
Volume :
5
fYear :
2003
fDate :
19-25 Oct. 2003
Firstpage :
3527
Abstract :
Ion microprobe analysis for acceptor doped II-VI compounds was performed. Samples of ZnSe and CdTe with Ag acceptors in the shallow depth were obtained by the laser processing. The ion beam induced luminescence spectrum of the Ag doped ZnSe sample had a peak, which was concerned with the acceptors and the formation of donors. The image of the ion beam induced charge for Ag doped CdTe crystal sample showed uneven profile, which might be due to the unevenness of laser irradiation effects. Further discussions on the amorphization are needed.
Keywords :
II-VI semiconductors; amorphisation; cadmium compounds; ion microprobe analysis; laser beam effects; luminescence; silver; zinc compounds; Ag acceptors; CdTe:Ag; ZnSe:Ag; acceptor-doped II-VI compounds; amorphization; ion beam induced charge; ion beam induced luminescence spectrum; ion microprobe analysis; laser irradiation effects; laser processing; shallow depth; Focusing; Ion beams; Laser beams; Luminescence; Optical materials; Radiation detectors; Semiconductor lasers; Space vector pulse width modulation; Wideband; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2003 IEEE
ISSN :
1082-3654
Print_ISBN :
0-7803-8257-9
Type :
conf
DOI :
10.1109/NSSMIC.2003.1352671
Filename :
1352671
Link To Document :
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