Thermally induced stress relaxation of silicon dioxide on vicinal Si(111) studied with surface nonlinear-optical techniques

Author

Lüpke, G. ; Wolter, F. ; Emmerichs, U. ; Meyer, C. ; Kurz, H. ; Yasuda, T. ; Lucovsky, G. ; Bjorkman, C.H.

Author_Institution

Inst. of Semicond. Electron. II, Rheinisch-Westfalische Tech. Hochschule, Aachen, Germany

fYear

1994

fDate

25-29 Jul 1994

Firstpage

89

Lastpage

91

Abstract

We report on optical second-harmonic (SH) and sum-frequency (SF) measurements from vicinal Si(111)-interfaces covered with a thermally grown oxide film and subjected to different annealing temperatures. We observed that the azimuthal anisotropy in the nonlinear optical response from the Si/SiO₂ interface changes after rapid thermal annealing (RTA)

Keywords

optical harmonic generation; rapid thermal annealing; silicon; silicon compounds; stress relaxation; Si; Si-SiO₂; Si/SiO₂ interface; annealing temperatures; azimuthal anisotropy; nonlinear optical response; optical second-harmonic measurements; rapid thermal annealing; silicon dioxide; sum-frequency measurements; surface nonlinear-optical techniques; thermally grown oxide film; thermally induced stress relaxation; vicinal Si(111); vicinal Si(111)-interfaces; Geometrical optics; Nonlinear optics; Optical films; Optical pulse generation; Power generation; Pulse amplifiers; Rapid thermal annealing; Silicon compounds; Temperature; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Nonlinear Optics: Materials, Fundamentals, and Applications, 1994. NLO '94 IEEE

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1473-5

Type

conf

DOI

10.1109/NLO.1994.470884

Filename

470884