Title :
A novel self aligned VDMOS device
Author_Institution :
Sichuan Inst. of Solid-State Circuit, Minist. of the Electron. Ind., Chongqing, China
Abstract :
In this paper, novel self aligned vertical double diffused metal oxide semiconductor (SAVDMOS) transistors with technological improvements, are described. The fillet structures of silicon dioxide have been formed in order to achieve the self alignment of titanium disilicide. Their maximum breakdown voltages are 210 V. The I-V characteristics of the devices are satisfactory
Keywords :
electric breakdown; etching; power MOSFET; sputter deposition; 210 V; I-V characteristics; SAVDMOS transistors; TiSi2-SiO2-Si; breakdown voltages; fillet structures; self aligned VDMOS device; vertical double diffused; Circuits; Conductivity; Electric breakdown; Sputter etching; Titanium;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503324
