Broadband high-efficiency monolithic InGaP/GaAs HBT power amplifiers for 3G handset applications

Author

Jager, H. ; Grebennikov, A. ; Heaney, E. ; Weigel, R.

Author_Institution

M/A-COM Eurotec Oper., Cork, Ireland

Volume

2

fYear

2002

fDate

2-7 June 2002

Firstpage

1035

Abstract

In this paper, an approach to high efficiency power amplifier performance over a wide frequency range is discussed. Results for practical implementation of a multiband and multi-mode handset power amplifier are shown. Measurements demonstrate feasibility of the concept for WCDMA, DCS1800 and PCS1900 high-efficient operation. A PAE of better than 38% at 27 dBm output power and an ACLR of -37 dBc in WCDMA operation, as well as greater than 50% PAE at 30 dBm output power in the DCS1800 and PCS1900 band are documented.

Keywords

III-V semiconductors; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; bipolar MMIC; cellular radio; gallium arsenide; gallium compounds; indium compounds; telephone sets; wideband amplifiers; 1.6 to 2 GHz; 38 percent; 3G handset applications; ACLR; DCS1800; InGaP-GaAs; PAE; PCS1900; WCDMA; broadband monolithic InGaP/GaAs HBT power amplifiers; high efficiency power amplifier performance; multiband multi-mode handset power amplifier; output power; third generation cellular phone systems; wide frequency range; Broadband amplifiers; Frequency; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Multiaccess communication; Power amplifiers; Power generation; RLC circuits; Telephone sets;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011812

Filename

1011812