InGaP PHEMTs for 3.5GHz W-CDMA applications

Author

Lan, E. ; Johnson, E. ; Knappenberger, B. ; Miller, M.

Author_Institution

Digital DNA Labs., Motorola Inc., Tempe, AZ, USA

Volume

2

fYear

2002

fDate

2-7 June 2002

Firstpage

1039

Abstract

In this paper we present DC, small signal, and power characteristics of an InGaP PHEMT device using InGaP as barrier layer material. A comparison of intrinsic Gm, Rds, Cgs, and Cgd with an AlGaAs PHEMT device showed that the InGaP PHEMT is very promising for microwave and RF linear power amplification. Operating from 12 V supplies, a 15.4 mm InGaP PHEMT device achieved 29.5 dBm output power with 12.1 dB associated gain and 25.6% power-added-efficiency at 3.5 GHz, while meeting the -40 dBc ACPR specification under W-CDMA stimulus.

Keywords

III-V semiconductors; S-parameters; cellular radio; code division multiple access; gallium compounds; indium compounds; microwave field effect transistors; microwave power amplifiers; microwave power transistors; power HEMT; telephone sets; 12 V; 12.1 dB; 15.4 mm; 25.6 percent; 3.5 GHz; 3.5-GHz W-CDMA applications; ACPR specification; DC characteristics; InGaP PHEMTs; InGaP barrier layer material; InGaP-InGaAs-AlGaAs-GaAs; RF linear power amplification; base station application; output power; power characteristics; power-added-efficiency; small signal S-parameter measurements; small signal characteristics; Breakdown voltage; Fabrication; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Lattices; Multiaccess communication; PHEMTs; Power generation; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011814

Filename

1011814