Title :
Broadband highly integrated LTCC front-end module for IEEE 802.11a WLAN applications
Author :
Lee, C.-H. ; Chakraborty, S. ; Sutono, A. ; Yoo, S. ; Heo, D. ; Laskar, J.
Author_Institution :
RF Solutions, Norcross, GA, USA
Abstract :
This paper presents the design, development and measurement of a highly-integrated and high linearity RF front-end module with integrated filter for IEEE 802.11a wireless LAN applications. The developed front-end MMIC includes LNA, PA, and SPDT switch integrated on a single chip in a commercial GaAs MESFET process. An embedded 3-D band pass filter has been integrated on the front-end module using LTCC technology. The performance of the front-end module is compliant to the HiPERLAN-I and IEEE 802.11a RF standards. The LNA exhibits 16.5 dB of gain, 2.1 dB of noise figure and IIP3 of 2.8dBm. The PA shows the 24 dBm output power and IM3 of better than 25dBc. The SPDT switch demonstrates 1.2 dB of insertion loss and 28dBm of input P1dB. To the best of our knowledge, this is the first report on C-band PA-LNA-Switch integrated on a single chip with embedded LTCC filter.
Keywords :
IEEE standards; MESFET integrated circuits; MMIC amplifiers; MMIC power amplifiers; band-pass filters; field effect MMIC; microwave switches; strip line filters; telecommunication standards; transceivers; wideband amplifiers; wireless LAN; 1.2 dB; 16.5 dB; 2.1 dB; 5 to 6 GHz; C-band front-end transceiver module; GaAs; HiPERLAN-I RF standard; IEEE 802.11a WLAN applications; IEEE 802.11a wireless LAN; IIP3; LNA; PA; SPDT switch; broadband highly integrated LTCC front-end module; commercial GaAs MESFET process; embedded 3-D stripline band pass filter; front-end MMIC; high linearity RF front-end module; insertion loss; integrated filter; output power; single chip integration; Band pass filters; Gain; Gallium arsenide; Linearity; MMICs; Noise figure; Radio frequency; Semiconductor device measurement; Switches; Wireless LAN;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011816