DocumentCode
1835014
Title
Investigation on low voltage nanometer sealed vacuum microelectron diode arrays
Author
Qiuxia, Xu ; Li Weining ; Suofa, Wang ; Shumin, Cai ; Yuyin, Zhao ; Li Lihua
Author_Institution
Microelectron. Centre, Acad. Sinica, Beijing, China
fYear
1995
fDate
24-28 Oct 1995
Firstpage
491
Lastpage
494
Abstract
This paper has investigated the structure of low-voltage nanometer sealed vacuum microelectron diode arrays and their fabrication technologies, obtained emission current of 100 mA at 4.2 V, equivalent to 3.7 μ A/tip. Their emission characteristics are analyzed and discussed
Keywords
diodes; electron field emission; nanotechnology; vacuum microelectronics; 100 mA; 4.2 V; LV vacuum microelectron diodes; emission characteristics; fabrication technologies; low-voltage operation; nanometer emitter tip curvature radius; sealed vacuum microelectron diode arrays; Anodes; Cathodes; Diodes; Electrons; Fabrication; Low voltage; Magnetic materials; Nanostructures; Vacuum technology; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.503328
Filename
503328
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