A 1.5 v High Swing Ultra-Low-Power Two Stage CMOS OP-AMP in 0.18 µm Technology

Author

Kargaran, Ehsan ; Khosrowjerdi, Hojat ; Ghaffarzadegan, Karim

Author_Institution

Sadjad Inst. for Higher Educ., Mashhad, Iran

Volume

1

fYear

2010

fDate

1-3 Aug. 2010

Abstract

A High Swing Ultra-Low-Power Two Stage CMOS OP-AMP in 0.18 μm Technology with 1.5v supply, is presented.Topology selection and theoretical analysis of the design are discussed. Cascode technique has been used to increase the dc gain. The unity-gain bandwidth is also enhanced using a gain-stage in the Miller capacitor feedback path. The proposed opamp provides 236 MHz unity-gain bandwidth, 81.3 degree phase margin and a peak to peak output swing 1.26 v. The circuit has 92.5 dB gain and slew rate is 16.75 v/μs . The power dissipation of the designed only is 50 μw. The designed system demonstrates relatively suitable response in different temperature.

Keywords

CMOS analogue integrated circuits; network topology; operational amplifiers; Miller capacitor feedback path; cascode technique; frequency 236 MHz; gain 92.5 dB; high swing ultra-low-power two stage CMOS op-amp; power 50 muW; size 0.18 mum; topology selection; voltage 1.26 V; voltage 1.5 V; Topology; Cascode; High Swing; Low-Voltage; Two Stage CMOS OP-AMP; Ultra-Low-Power;

fLanguage

English

Publisher

ieee

Conference_Titel

Mechanical and Electronics Engineering (ICMEE), 2010 2nd International Conference on

Conference_Location

Kyoto

Print_ISBN

978-1-4244-7479-0

Electronic_ISBN

978-1-4244-7481-3

Type

conf

DOI

10.1109/ICMEE.2010.5558594

Filename

5558594