Title :
Instability of field electron emission from FEA
Author :
Song, Haibo ; Li, Qiong ; Xu, Jingfang ; Liu, Xinfu
Author_Institution :
Dept. of Electron. Eng., East China Normal Univ., Shanghai, China
Abstract :
The instability of silicon field emitter arrays (FEA) has been studied by measuring their current-voltage features. The morphology at the tip of emitter is decided by the equilibrium between the surface tension and electrostatic stress. The contaminant at the emitter surface plays a significant role in breaking the equilibrium between these two stresses, hence makes the micro-emitters grow quickly and initiates a catastrophic cathode vacuum arc
Keywords :
electron field emission; elemental semiconductors; silicon; stability; vacuum arcs; vacuum microelectronics; FEA instability; Si; Si field emitter arrays; cathode vacuum arc; current-voltage characteristics; electrostatic stress; emitter surface; field electron emission; microemitters; surface tension; Current measurement; Electron emission; Electrostatic measurements; Field emitter arrays; Morphology; Pollution measurement; Silicon; Stress; Surface contamination; Surface tension;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503329
