Title :
Numerical calculation of I-V characteristic curves of an ion implanted GaAs MESFET
Author_Institution :
Sch. of Eng. & Comput. Sci., Oakland Univ., Rochester, MI, USA
Abstract :
A numerical method for calculating the I-V characteristics of a GaAs MESFET with ion implanted layer is presented. This method is based on the finding of the channel conductance as a function of the voltage drop across the metal-semiconductor junction which in turn is related to the depletion depth of the active layer through the solution of Poisson´s equation
Keywords :
III-V semiconductors; Schottky gate field effect transistors; doping profiles; gallium arsenide; ion implantation; semiconductor device models; GaAs; I-V characteristic curves; MESFET; Poisson´s equation; active layer; channel conductance; depletion depth; ion implantation; metal-semiconductor junction; voltage drop; Computer science; Doping profiles; Electron devices; Gallium arsenide; Implants; MESFETs; Permittivity; Poisson equations; Substrates; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503333
