Title :
A GaAs MHEMT distributed amplifier with 300-GHz gain-bandwidth product for 40-Gb/s optical applications
Author :
Heins, M.S. ; Campbell, C.F. ; Kao, M.-Y. ; Muir, M.E. ; Carroll, J.M.
Author_Institution :
TriQuint Semicond., Richardson, TX, USA
Abstract :
A distributed amplifier with greater than 13.4 dB gain and 65 GHz bandwidth has been demonstrated using 0.15 /spl mu/m metamorphic GaAs HEMT technology. The amplifier has an average noise figure of 3.1 dB from 2-40 GHz and an output 1-dB compression point of 11 dBm at 22 GHz. The group delay variation from 1 to 40 GHz is /spl plusmn/7.5 ps. The amplifier may be biased with a single supply voltage, and consumes only 105 mW. With these characteristics, the amplifier is ideally suited for 40-Gb/s optical networks.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; distributed amplifiers; field effect MMIC; gallium arsenide; high-speed integrated circuits; low-power electronics; optical communication equipment; optical fibre networks; 0.15 micron; 105 mW; 13.4 dB; 2 to 40 GHz; 3.1 dB; 40 Gbit/s; 40-Gb/s optical applications; 40-Gb/s optical networks; 65 GHz; GaAs; GaAs MHEMT distributed amplifier; InGaAs-GaAs; MMIC; average noise figure; gain-bandwidth product; group delay variation; metamorphic GaAs HEMT technology; output 1-dB compression point; power consumption; single supply voltage biasing; Bandwidth; Delay; Distributed amplifiers; Gain; Gallium arsenide; HEMTs; Noise figure; Optical amplifiers; Voltage; mHEMTs;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011822
