• DocumentCode
    1835287
  • Title

    Metal silicon interfacial reactions in SOI

  • Author

    Tu, K.N. ; Liou, H.K.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., California Univ., Los Angeles, CA, USA
  • fYear
    1995
  • fDate
    24-28 Oct 1995
  • Firstpage
    530
  • Lastpage
    531
  • Abstract
    A radius of curvature technique has been employed to measure the in-plane biaxial stress in the superficial silicon layer and the buried oxide layer in a silicon-on-insulator (SOI) wafer. The wafer was processed by the separation by implanted oxygen (SIMOX) method. The stresses with and without the formation of TiSi2 are presented
  • Keywords
    SIMOX; buried layers; chemical interdiffusion; internal stresses; silicon-on-insulator; SIMOX method; SOI wafer; Si-SiO2; TiSi2; TiSi2 formation; buried oxide layer; in-plane biaxial stress; metal Si interfacial reactions; radius of curvature technique; substrate/BOX/SOI; superficial Si layer; Compressive stress; Heating; Silicides; Silicon on insulator technology; Stress measurement; Substrates; Temperature; Tensile stress; Thermal expansion; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-3062-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.1995.503340
  • Filename
    503340
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1835287