Title :
Metal silicon interfacial reactions in SOI
Author :
Tu, K.N. ; Liou, H.K.
Author_Institution :
Dept. of Mater. Sci. & Eng., California Univ., Los Angeles, CA, USA
Abstract :
A radius of curvature technique has been employed to measure the in-plane biaxial stress in the superficial silicon layer and the buried oxide layer in a silicon-on-insulator (SOI) wafer. The wafer was processed by the separation by implanted oxygen (SIMOX) method. The stresses with and without the formation of TiSi2 are presented
Keywords :
SIMOX; buried layers; chemical interdiffusion; internal stresses; silicon-on-insulator; SIMOX method; SOI wafer; Si-SiO2; TiSi2; TiSi2 formation; buried oxide layer; in-plane biaxial stress; metal Si interfacial reactions; radius of curvature technique; substrate/BOX/SOI; superficial Si layer; Compressive stress; Heating; Silicides; Silicon on insulator technology; Stress measurement; Substrates; Temperature; Tensile stress; Thermal expansion; Thermal stresses;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503340
