Simulation of temperature distribution in recrystallized SOI film with reflective-stripe structure by laser irradiation

Author

Wang, Hongwei ; Zhang, Jisheng ; Zhan, Changqing ; Tsien, Pei-Hsin

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

1995

fDate

24-28 Oct 1995

Firstpage

538

Lastpage

540

Abstract

A two-dimensional thermal analysis on laser induced recrystallization of SOI film with a reflective-stripe structure was made, indicating that the temperature distribution is related to laser power, scanning rate, high-reflective-region width, reflectivities of high- and low-reflective-regions and the alignment of the laser beam with the high-reflective-region

Keywords

Green´s function methods; integration; laser beam annealing; recrystallisation annealing; reflectivity; semiconductor thin films; silicon-on-insulator; temperature distribution; thermal analysis; Green integration method; SOI film; Si-SiO₂; high-reflective-region width; laser beam alignment; laser induced recrystallization; laser power; reflective-stripe structure; reflectivities; scanning rate; temperature distribution simulation; two-dimensional thermal analysis; Computational modeling; Computer simulation; Distributed computing; Laser beams; Optical films; Power lasers; Reflectivity; Silicon; Solids; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.503343

Filename

503343