Title :
Simulation of temperature distribution in recrystallized SOI film with reflective-stripe structure by laser irradiation
Author :
Wang, Hongwei ; Zhang, Jisheng ; Zhan, Changqing ; Tsien, Pei-Hsin
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
A two-dimensional thermal analysis on laser induced recrystallization of SOI film with a reflective-stripe structure was made, indicating that the temperature distribution is related to laser power, scanning rate, high-reflective-region width, reflectivities of high- and low-reflective-regions and the alignment of the laser beam with the high-reflective-region
Keywords :
Green´s function methods; integration; laser beam annealing; recrystallisation annealing; reflectivity; semiconductor thin films; silicon-on-insulator; temperature distribution; thermal analysis; Green integration method; SOI film; Si-SiO2; high-reflective-region width; laser beam alignment; laser induced recrystallization; laser power; reflective-stripe structure; reflectivities; scanning rate; temperature distribution simulation; two-dimensional thermal analysis; Computational modeling; Computer simulation; Distributed computing; Laser beams; Optical films; Power lasers; Reflectivity; Silicon; Solids; Temperature distribution;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503343
