• DocumentCode
    1835374
  • Title

    On-Wafer Power Measurements

  • Author

    Dawson, Dale E. ; Salib, Mike L.

  • Author_Institution
    P. 0. Box 1521, MS 3Kll, Westinghouse Electric Corporation, Baltimore, MD 21203
  • Volume
    16
  • fYear
    1989
  • fDate
    Nov. 30 1989-Dec. 1 1989
  • Firstpage
    77
  • Lastpage
    85
  • Abstract
    Wafer maps of output power have been obtained at the 2 watt level by onwafer probing. to prevent chip burn out, and the measurement accuracy. This paper describes the probing technique, what has been done to prevent chip burn out, and the measurement accuracy.
  • Keywords
    Electric breakdown; FETs; Gold; MMICs; Measurement standards; Power measurement; Power supplies; Probes; Q measurement; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ARFTG Conference Digest-Winter, 34th
  • Conference_Location
    Ft. Lauderdale, FL, USA
  • Print_ISBN
    0-7803-5686-1
  • Type

    conf

  • DOI
    10.1109/ARFTG.1989.323959
  • Filename
    4119527
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1835374