Title :
β-FeSi2 formation on MOCVD Fe/Si(100) by solid phase epitaxy
Author :
Hao, Chen ; Ping, Han ; Youdou, Zheng
Author_Institution :
Dept. of Phys., Nanjing Univ., China
Abstract :
In this paper we report for the first time the solid phase epitaxy of β-FeSi2 films using Fe/Si(100) heterostructures obtained by MOCVD. The formation process of the β-FeSi2 thin films involves the deposition of iron on Si(100) by MOCVD and subsequent annealing. The single-crystal structure of Fe film on Si(100) before annealing was revealed by X-ray diffraction and electron microscopy. After annealing, the synthesis of β-FeSi2 film is identified by X-ray diffraction
Keywords :
X-ray diffraction; annealing; chemical interdiffusion; chemical vapour deposition; electron microscopy; integrated circuit metallisation; iron compounds; solid phase epitaxial growth; β-FeSi2 formation; 600 C; Fe-Si; Fe/Si(100) heterostructures; FeSi2; MOCVD Fe/Si(100); Si; X-ray diffraction; annealing; electron microscopy; film synthesis; single-crystal structure; solid phase epitaxy; Annealing; Epitaxial growth; Iron; MOCVD; Semiconductor films; Silicides; Silicon; Solids; Substrates; X-ray diffraction;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503350
