DocumentCode :
1835540
Title :
A systematic approach to a reliable neural model for pHEMT using different numbers of training data
Author :
Joodaki, M. ; Kompa, G.
Author_Institution :
Dept. of High Frequency Eng., Kassel Univ., Germany
Volume :
2
fYear :
2002
fDate :
2-7 June 2002
Firstpage :
1105
Abstract :
A systematic approach is presented to achieve a reliable neural model for microwave active devices with different numbers of training data. The method is implemented for a small-signal bias depended modeling of pHEMT with different numbers of training data. The errors for different numbers of training data have been compared to each other and show that by using this method a reliable model is achievable even though the number of training data is considerably small. The method aims at constructing a model which can satisfy the criteria of minimum training error, maximum smoothness (to avoid the problem of overfitting), and simplest network structure.
Keywords :
electronic engineering computing; high electron mobility transistors; learning (artificial intelligence); microwave field effect transistors; neural nets; semiconductor device models; PHEMT; microwave active device; neural model; small-signal model; training data; Artificial neural networks; Data engineering; Frequency; Multi-layer neural network; Neural networks; PHEMTs; Predictive models; Training data; US Department of Energy; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-7239-5
Type :
conf
DOI :
10.1109/MWSYM.2002.1011840
Filename :
1011840
Link To Document :
بازگشت