Title :
Study of the heavy metal gettering effect of porous silicon on SOI structure
Author :
Wang, X.H. ; Huang, Y.P. ; Bao, Z.M. ; Tang, T.A. ; Li, A.Z. ; Zou, S.X.
Author_Institution :
Dept. of Electr. Eng., Fudan Univ., Shanghai, China
Abstract :
Gettering of copper and nickel in FIPOS SOI structures has been investigated using XTEM and SIMS for the first time in this paper. A transition region with dendrite porous oxidized Si exists at the interface between the Si oxidized porous layer (PS) and the substrate Si. This transition region may provide effective gettering sites for Cu and Ni which can diffuse from the top Si layer to the substrate during the SOI formation. In addition, Cu segregates to the transition region more readily
Keywords :
elemental semiconductors; getters; porous materials; secondary ion mass spectra; silicon; silicon-on-insulator; transmission electron microscopy; FIPOS SOI structure; SIMS; Si:Cu,Ni-SiO2; XTEM; dendrite oxidized porous silicon; diffusion; heavy metal gettering; interfacial transition region; segregation; Annealing; Contamination; Copper; Doping; Etching; Gettering; Impurities; Nickel; Silicon; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503354
