Title :
Study on resistivity stability of NTDFZSi at high temperature
Author :
Li, Yangxian ; Ju, Yulin ; Cao, Junzhong ; Wang, Hongmei ; Cui, Desheng
Author_Institution :
Mater. Res. Center, Hebei Inst. of Technol., Tianjin, China
Abstract :
The resistivity stability of FZSi at high temperature has been studied by the method of isothermal annealing, X-ray transmission topography, spread resistance (SR), etc. The effect of microdefects on the resistivity stability at high temperature was studied primarily
Keywords :
X-ray topography; annealing; electrical resistivity; elemental semiconductors; high-temperature effects; silicon; NTDFZSi; Si; X-ray transmission topography; high temperature; isothermal annealing; microdefects; neutron transmutation doped float zone silicon; resistivity stability; spread resistance; Annealing; Conductivity; Electronics industry; Impurities; Isothermal processes; Lattices; Silicon; Stability; Surfaces; Temperature;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503355
