DocumentCode
1835652
Title
Design of broadband inductorless LNAs in ultra-scaled CMOS technologies
Author
Bevilacqua, Andrea ; Camponeschi, Matteo ; Tiebout, Marc ; Gerosa, Andrea ; Neviani, Andrea
Author_Institution
Univ. di Padova, Padova
fYear
2008
fDate
18-21 May 2008
Firstpage
1300
Lastpage
1303
Abstract
Shunt-shunt resistive feedback is used in this paper to design inductorless broadband LNAs in a digital 45 nm CMOS technology. Simulation results show 18 dB gain over a 10 GHz bandwidth, with NF < 3 dB and IIP3 > -7 dBm in-band, while consuming 32 mW from a 1 V supply voltage.
Keywords
CMOS integrated circuits; feedback; integrated circuit design; low noise amplifiers; wideband amplifiers; bandwidth 10 GHz; broadband inductorless LNA; gain 18 dB; power 32 mW; shunt-shunt resistive feedback; size 45 nm; ultra-scaled CMOS technology; voltage 1 V; Broadband amplifiers; CMOS technology; Crosstalk; Low-noise amplifiers; Negative feedback; Noise reduction; Phase noise; Radio frequency; Radiofrequency amplifiers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location
Seattle, WA
Print_ISBN
978-1-4244-1683-7
Electronic_ISBN
978-1-4244-1684-4
Type
conf
DOI
10.1109/ISCAS.2008.4541664
Filename
4541664
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