DocumentCode
1835712
Title
An analytical delayed-turn-off model for 6H-SiC buried-channel NMOS devices considering incomplete ionization
Author
Su, K.W. ; Kuo, J.B.
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
1995
fDate
24-28 Oct 1995
Firstpage
592
Lastpage
594
Abstract
This paper reports an analytical delayed-turn-off model for 6H-SiC buried-channel NMOS devices considering incomplete ionization. As verified by the PISCES results, the analytical model provides an accurate prediction of the IV characteristics of a 6H-SiC buried-channel NMOS device. According to the analytical model, the slope of delayed-turn-off region becomes smaller as the doping density of the buried channel increases
Keywords
MIS devices; buried layers; ionisation; semiconductor device models; semiconductor materials; silicon compounds; 6H-SiC buried-channel NMOS device; I-V characteristics; PISCES; SiC; analytical delayed-turn-off model; doping density; incomplete ionization; Analytical models; Delay effects; Integrated circuit modeling; Ionization; MOS devices; Photonic band gap; Poisson equations; Predictive models; Semiconductor process modeling; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.503361
Filename
503361
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