Title :
An analytical delayed-turn-off model for 6H-SiC buried-channel NMOS devices considering incomplete ionization
Author :
Su, K.W. ; Kuo, J.B.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
This paper reports an analytical delayed-turn-off model for 6H-SiC buried-channel NMOS devices considering incomplete ionization. As verified by the PISCES results, the analytical model provides an accurate prediction of the IV characteristics of a 6H-SiC buried-channel NMOS device. According to the analytical model, the slope of delayed-turn-off region becomes smaller as the doping density of the buried channel increases
Keywords :
MIS devices; buried layers; ionisation; semiconductor device models; semiconductor materials; silicon compounds; 6H-SiC buried-channel NMOS device; I-V characteristics; PISCES; SiC; analytical delayed-turn-off model; doping density; incomplete ionization; Analytical models; Delay effects; Integrated circuit modeling; Ionization; MOS devices; Photonic band gap; Poisson equations; Predictive models; Semiconductor process modeling; Thermal conductivity;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503361
