Lumped device modeling with FDTD including packaging effects

Author

Boon Ping Koh ; Craddock, I.J. ; Urwin-Wright, P. ; Railton, C.J.

Author_Institution

Centre for Commun. Res., Bristol Univ., UK

Volume

2

fYear

2002

fDate

2-7 June 2002

Firstpage

1139

Abstract

A two-terminal device can be incorporated into FDTD using the Lumped Element FDTD (LE-FDTD) formulation, unfortunately, this method is not able to analyze accurately the packaging effects of the device. This is possible using Lumped Network FDTD (LN-FDTD) - however LN-FDTD requires a complicated pre-calculation for simple devices such as Schottky or varactor diode. Therefore, this paper presents a simple and effective state space approach to incorporate device packaging effects into FDTD algorithm. The new technique is validated by means of experimental measurements of a varactor-tuned patch antenna and the agreement between the predicted and actual responses is shown to be excellent.

Keywords

antenna theory; finite difference time-domain analysis; microstrip antennas; packaging; varactors; Schottky diode; lumped element FDTD model; packaging effects; two-terminal device; varactor diode; varactor-tuned patch antenna; Capacitance; Circuits; Current density; Finite difference methods; Inductance; Packaging; Patch antennas; Schottky diodes; Time domain analysis; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011849

Filename

1011849