DocumentCode
1835830
Title
Device physics studies of large signal transient performance and large signal power amplification performance of 0.1 micron channel length thin film SOI/CMOS IC and 0.1 micron basewidth HBT MMIC´s
Author
Huang, C. ; Yang, Y.H. ; Lee, G.H. ; Feng, G.C. ; Chi, T.J.
Author_Institution
China Aerosp. Corp., Beijing, China
fYear
1995
fDate
24-28 Oct 1995
Firstpage
607
Lastpage
609
Abstract
Preliminary results are presented for device physics studies of large sigal transient performance and large signal power amplification of 0.1 micron channel length thin film SOI/CMOS IC and 0.1 micron base width HBT MMICs
Keywords
CMOS analogue integrated circuits; MMIC power amplifiers; bipolar MMIC; heterojunction bipolar transistors; integrated circuit modelling; power amplifiers; power integrated circuits; silicon-on-insulator; transient analysis; 0.1 micron; device physics; large signal power amplification; large signal transient characteristics; submicron basewidth HBT MMIC; submicron channel length thin film SOI/CMOS IC; CMOS integrated circuits; Circuit simulation; Computational modeling; Equivalent circuits; Heterojunction bipolar transistors; MMICs; Microelectronics; Physics; Semiconductor thin films; Thin film devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.503366
Filename
503366
Link To Document