Title :
Adaptive tessellation for the three-dimensional simulation of doping profiles
Author :
Leitner, E. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Austria
Abstract :
We present a new process simulation module which is capable of solving the coupled nonlinear partial differential equations of diffusion problems in three space dimensions. An adaptive gridding method has been developed in order to handle geometries consisting of multiple material regions of arbitrary shape
Keywords :
diffusion; doping profiles; nonlinear differential equations; partial differential equations; semiconductor doping; semiconductor process modelling; adaptive gridding; adaptive tessellation; coupled nonlinear partial differential equations; diffusion; doping profiles; multiple material regions; process simulation module; three-dimensional simulation; Boron; Computational modeling; Doping profiles; Error correction; Grid computing; Microelectronics; Nonlinear equations; Object oriented modeling; Shape; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503367
