Title :
Ka-band self-biased monolithic gaas pHEMT low noise amplifier
Author :
Wang, Qiangji ; Guo, Yunchuan
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A 32 -40 GHz monolithic low noise three stage amplifier has been developed using an GaAs/InGaAs/AlGaAs pseudomorphic HEMT with a gate length of 0.15um. In order to reduce the chip size and circuit´s complexity, self-Biased technology has been applied. The chip only needs two DC Pads. Resistive matching technologies have been used to enhance the electrical specifications like return loss and gain flatness. The simulated data shows better than 2.5 dB of noise figure with an associated gain of more than 20dB over the frequency band of 32-40 GHz. Additionaly, the input/output return losses is better than 14.8 dB and the P1dBm more than 9.8dBm. The layout size is 2.1 × 0.8 mm.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MMIC; gallium arsenide; low noise amplifiers; DC Pads; GaAs; Ka-band self-biased monolithic pHEMT low noise amplifier; circuit complexity; distance 0.15 mum; electrical specification; frequency 32 GHz to 40 GHz; gain flatness; noise figure; resistive matching technology; Gain; Logic gates; MMICs; Noise; Noise figure; PHEMTs; GaAs pHEMT; LNA; MMIC; Self-Bias;
Conference_Titel :
Microwave Technology & Computational Electromagnetics (ICMTCE), 2011 IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-8556-7
DOI :
10.1109/ICMTCE.2011.5915506
