Deep submicron technology and applications

A variety of deep submicron technologies have been developed in the project “Deep Submicron structure and Mesoscopic physics”. A 93 nm linewidth pattern and a 0.3 μm PHEMT were obtained by X-ray lithography with a synchrotron radiation source in BEPC NL. 0.1 μm resolution was attained by electron beam lithography, which was performed in a modified NEC S-530 scanning electron microscope system. Microdisk lasers were fabricated by E-Beam direct writing combined with selective chemical etching processing. In addition, we successfully investigated an ICP dry etching system with a high density plasma and obtained a 0.4 μm linewidth pattern. E-Beam doping is a new method to obtain 0.1 μm shallow junction depth. We successfully apply the above technology and other alternative approaches for manufacture of 0.2 μm Si MOSFET´s, a 0.3 μm PHEMT, a vacuum microelectronic diode array, etc. Adopted PECVD and Ar⁺ laser recrystallization technology combined with SiN_x barrier Si quantum micro crystals of nm size and photoluminescence were obtained