Title :
Fabrication of Ti and Co silicided shallow junctions using novel techniques
Author :
Ma, M.P. ; Lin, C.T. ; Cheng, H.C.
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Taipei, Taiwan
Abstract :
Excellent Ti and Co silicided shallow p+n and n+ p junctions have been formed using implant through metal and silicide (ITM and ITS) and implant through poly-Si (ITP) schemes. Various fabrication processes and their impacts on the resultant junction characteristics are characterized and discussed
Keywords :
cobalt compounds; ion implantation; p-n junctions; semiconductor technology; titanium compounds; ITM; ITP; ITS; Si-CoSi; Si-TiSi; fabrication; implant through metal; implant through polysilicon; implant through silicide; n+p junction; p+n junction; silicided shallow junctions; Annealing; Circuits; Diodes; Fabrication; Implants; MOSFETs; Silicides; Temperature; Titanium; Ultra large scale integration;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503383
