Results of an On-Wafer Noise-Parameter Measurement Comparison

The results from an on-wafer noise-parameter measurement comparison are presented. The measurement comparison was coordinated by the TRW Measurement Engineering Department. The measurement comparison consisted of two parts. In the first part, after standardizing the network analyzer and noise-figure meter operating conditions, each participant calibrated their system using their customary S-parameter calibration method and calibration elements. After calibration, different-sized GaAs MESFETs were measured at specified bias conditions from 2-18 GHz or 2-26 GHz (depending on the particular system capability). Both the noise parameters and the S-parameters were documented for each measurement. In the second part of the measurement comparison, each participant was supplied with the following identical equipment: a pair of 200-micron probes, a calibration substrate, a calibration kit, and a noise source with corresponding ENR values. Using the same network analyzer and noise-figure meter conditions as in the first part, the participants recalibrated their systems with the provided equipment and S-parameter calibration kit. The same devices were measured again at the same bias conditions. The TRW Measurement Engineering Department served as the control lab by measuring the devices four times during the measurement comparison. Hence, in addition to the two-part data comparison between the various participants, measurement repeatability results from the TRW Measurement Engineering Department will also be presented.